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Brand Name : onsemi
Model Number : FGHL75T65MQDTL4
MOQ : 50pcs
Price : Negotiable
Supply Ability : 1000000pcs
Voltage - Collector Emitter Breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current - Collector Pulsed (Icm) : 300 A
Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 75A
Power - Max : 375 W
Switching Energy : 1.2mJ (on), 1.1mJ (off)
onsemi FGHL75T65MQDTx Trench IGBTs are 4th generation mid-speed IGBTs technology-packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive temperature co-efficient for easy parallel operation, high current capability, smooth and optimized switching, and tight parameter distribution. The FGHL75T65MQDT is built in a TO247-3L package and the FGHL75T65MQDTL4 IGBT is built in a TO247-4L package. These IGBTs are ideal for applications in solar inverters, UPS, ESS, PFC, and converters.
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FGHL75T65MQDTL4 Field Stop Trench IGBT 650V 80A 375W Through Hole TO-247-4L Images |