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FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

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FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

Name: FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO2474L
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : FGH4L40T120LQD

MOQ : 50pcs

Price : Negotiable

Supply Ability : 1000000pcs

Voltage - Collector Emitter Breakdown (Max) : 1200 V

Current - Collector (Ic) (Max) : 80 A

Current - Collector Pulsed (Icm) : 160 A

Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 40A

Power - Max : 306 W

Switching Energy : 1.04mJ (on), 1.35mJ (off)

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FGH4L40T120LQD IGBT Trench Field Stop 1200 V 80 A 306 W Through Hole TO-247-4L

onsemi FGH4L40T120LQD IGBT

onsemi FGH4L40T120LQD IGBT is a robust Ultra Field Stop Trench construction that provides superior performance in demanding switching applications. This IGBT is incorporated into the device which is a soft and fast co-packaged free-wheeling diode with a low forward voltage. The FGH4L40T120LQD IGBT offers both low on-state voltage and minimal switching loss. This IGBT operates at 175°C maximum junction temperature. The FGH4L40T120LQD IGBT operates at 1200V, 40A, and is built in a TO247 4L package. Typical applications include solar inverters and UPS, industrial switching, and welding.

FEATURES

Extremely efficient trench with field stop technology
175°C maximum junction temperature (TJ)
Fast and soft reverse recovery diode

Optimized for Low VCE(Sat)
1200V maximum Collector-Emitter Voltage (VCE)

APPLICATIONS

Solar inverter and UPS
Industrial switching

Welding

PIN CONNECTION

FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

GATE CHARGE CHARACTERISTICS

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